Semiconductor packaging device comprising a shield structure

ABSTRACT

Various embodiments of the present application are directed towards a semiconductor packaging device including a shield structure configured to block magnetic and/or electric fields from a first electronic component and a second electronic component. The first and second electronic components may, for example, be inductors or some other suitable electronic components. In some embodiments, a first IC chip overlies a second IC chip. The first IC chip includes a first substrate and a first interconnect structure overlying the first substrate. The second IC chip includes a second substrate and a second interconnect structure overlying the second substrate. The first and second electronic components are respectively in the first and second interconnect structures. The shield structure is directly between the first and second electronic components. Further, the shield structure substantially covers the second electronic component and/or would substantially cover the first electronic component if the semiconductor packaging device was flipped vertically.

BACKGROUND

The semiconductor manufacturing industry has continually improved theprocessing capabilities and power consumption of integrated circuits(ICs) by shrinking the minimum feature size. However, in recent years,process limitations have made it difficult to continue shrinking theminimum feature size. The stacking of two-dimensional (2D) ICs intothree-dimensional (3D) ICs has emerged as a potential approach tocontinue improving processing capabilities and power consumption of ICs.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a cross-sectional view of some embodiments of athree-dimensional integrated circuit (3DIC) in which a shield structurecomprises a shield wire directly between electronic components.

FIG. 2 illustrates a top layout of some embodiments of the shield wireof FIG. 1 and the electronic components of FIG. 1.

FIGS. 3A-3C illustrate cross-sectional views of some alternativeembodiments of the 3DIC of FIG. 1 in which electrical coupling to theshield wire is varied.

FIG. 4 illustrates a cross-sectional view of some alternativeembodiments of the 3DIC of FIG. 1 in which the shield structurecomprises a doped shield region of a substrate in place of the shieldwire.

FIG. 5 illustrates a top layout of some embodiments of the doped shieldregion of FIG. 4 and the electronic components of FIG. 4.

FIG. 6 illustrates a cross-sectional view of some alternativeembodiments of the 3DIC of FIG. 1 in which the shield structure furthercomprises a doped shield region of a substrate directly between theelectronic components.

FIG. 7 illustrates a top layout of some embodiments of the shieldstructure of FIG. 6 and the electronic components of FIG. 6.

FIGS. 8A-8C illustrate cross-sectional views of some alternativeembodiments of the 3DIC of FIG. 6 in which electrical coupling to theshield wire is varied

FIG. 9 illustrates an expanded cross-sectional view of some moredetailed embodiments of the 3DIC of FIG. 1 in which various interconnectand bond structures are shown in greater detail and a pad structure isalong a top surface of the 3DIC.

FIGS. 10A-10C illustrate cross-sectional views of some alternativeembodiments of the 3DIC of FIG. 9 in which a location of the shieldstructure is varied.

FIGS. 11A and 11B illustrate cross-sectional views of some embodimentsof a 3DIC comprising an interior region IR and a peripheral region PR inwhich the shield structures of FIGS. 3B and 8A are respectively at theperipheral region PR.

FIGS. 12-26 illustrate a series of cross-sectional views of someembodiments of a method for forming a 3DIC in which a shield structurecomprises a shield wire directly between electronic components.

FIG. 27 illustrates a block diagram of some embodiments of the method ofFIGS. 12-26.

FIGS. 28-36 illustrate a series of cross-sectional views of someembodiments of a method for forming a 3DIC in which a shield structurecomprises a doped shield region of a substrate and a shield wire bothdirectly between electronic components.

FIG. 37 illustrates a block diagram of some embodiments of the method ofFIGS. 28-36.

DETAILED DESCRIPTION

The present disclosure provides many different embodiments, or examples,for implementing different features of this disclosure. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In some embodiments, a three-dimensional integrated circuit (3DIC)comprises a first integrated circuit (IC) chip and a second IC chip. Thefirst IC chip comprises a first substrate and a first interconnectstructure overlying the first substrate on a frontside of the firstsubstrate. Similarly, the second IC chip comprises a second substrateand a second interconnect structure overlying the second substrate on afrontside of the second substrate. The second IC chip underlies thefirst IC chip and is bonded to a backside of the first substrate, suchthat the second interconnect structure is between the first and secondsubstrates. A first inductor and a second inductor are respectively inthe first and second interconnect structure. The first and secondinductors have multiple applications, but one such application may, forexample, be to smooth current on ground and power lines in the first andsecond interconnect structures.

In some embodiments, the first inductor completely covers and has a sametop layout as the second inductor. Such embodiments may, for example,arise when the first and second inductors are formed by aphotolithography/etching process using a same photoreticle or photomask.A photoreticle or photomask is expensive, such that reusing aphotoreticle or photomask is a substantial cost savings. However, wherethe first inductor completely covers and has a same top layout as thesecond inductor, magnetic fields from the first and second inductorshave a high propensity of disturbing the first and second inductors.Such disturbance may lead to increased noise at the first and secondinductors and may negatively impact operation of the 3DIC. For example,operating voltages of the 3DIC may be shifted out of specificationand/or performance of the 3DIC may be degraded.

Various embodiments of the present application are directed towards a3DIC (or a semiconductor packaging device) in which a shield structureis directly between electronic components and is configured to blockmagnetic and/or electric fields from passing between the electroniccomponents. In some embodiments, the 3DIC comprises a first IC chip anda second IC chip underlying the first IC chip. The first IC chipcomprises a first substrate and a first interconnect structure overlyingthe first substrate. Similarly, the second IC chip comprises a secondsubstrate and a second interconnect structure overlying the secondsubstrate. A first electronic component and a second electroniccomponent are respectively in the first and second interconnectstructures. The first and second electronic components may, for example,be inductors or some other suitable electronic components. The shieldstructure is directly between and spaced from the first and secondelectronic components. Further, the shield structure substantially (orcompletely) covers the second electronic component and is configured toblock magnetic and/or electric fields.

By arranging the shield structure directly between the first and secondelectronic components, the first electronic component does not disturbor minimally disturbs the second electronic component and vice versa.This, in turn, allows the same photoreticle or photomask to be used toform the first and second electronic components without the negativeeffects associated with the first and second electronic componentsdisturbing each other. As noted above, using the same photoreticle orphotomask to form the first and second electronic components is asubstantial cost savings. Further, as noted above, the disturbances ofthe first and second electronic components could shift operatingparameters of the 3DIC out of specification and/or degrade performanceof the 3DIC.

With reference to FIG. 1, a cross-sectional view 100 of some embodimentsof a 3DIC is provided in which a shield structure 102 is directlybetween a first electronic component 104 and a second electroniccomponent 106. The first electronic component 104 directly overlies thesecond electronic component 106 and is in a first IC chip 108. Thesecond electronic component 106 is in a second IC chip 110 thatunderlies and is bonded to the first IC chip 108. The first and secondelectronic components 104, 106 may, for example, be inductors or someother suitable passive electronic components. Active electroniccomponents and other types of electronic components are, however,amenable in some embodiments.

In some embodiments, the first electronic component 104 completelycovers and has a same top layout as the second electronic component 106.These embodiments may, for example, arise when the first and secondelectronic components 104, 106 are formed using a same photoreticle orphotomask. As noted above, a photoreticle or photomask is expensive,such that using the same photoreticle or photomask for both the firstand second electronic components 104, 106 is a substantial cost savings.Additionally, in some embodiments, the first and second electroniccomponents 104, 106 are or comprise metal and/or some other suitableconductive material(s). These embodiments may, for example, arise atleast when the first and second electronic components 104, 106 areinductors.

The shield structure 102 comprises a backside shield wire 112 bsconfigured to block magnetic and/or electric fields from passing fromthe first electronic component 104 to the second electronic component106 and vice versa. Absent the backside shield wire 112 bs, the magneticand/or electric fields from the first electronic component 104 may, forexample, cause noise and/or other disturbances at the second electroniccomponents 106 and vice versa. For example, in at least embodiments inwhich the first and second electronic components 104, 106 are inductorsand the first electronic component 104 completely covers and has a sametop layout as the second electronic component 106, magnetic fields fromthe first electronic component 104 may disturb the second electroniccomponent 106 and vice versa.

Disturbances at the first and second electronic components 104, 106 may,for example, negatively impact operation of the 3DIC. For example, wherethe first and second electronic components 104, 106 are inductors usedto smooth current on power and ground lines in the first and second ICchips 108, 110, the disturbances may transfer to the power and groundlines. This transfer may, for example, shift operating parameters of the3DIC out of specification and/or otherwise degrade performance of the3DIC.

In some embodiments, the backside shield wire 112 bs blocks magneticfields from the first and second electronic components 104, 106 byeddy-current losses. For example, the magnetic fields from the first andsecond electronic components 104, 106 may induce eddy currents in thefirst and second electronic 104, 106. These eddy currents may, in turn,produce magnetic fields that oppose the magnetic fields from the firstand second electronic components 104, 106 and hence at least partiallycancel out the magnetic fields from first and second electroniccomponents 104, 106. In some embodiments, the backside shield wire 112bs redirects magnetic fields from the first and second electroniccomponents 104, 106 around the first and second electronic components104, 106. For example, where the backside shield wire 112 bs is orcomprises a material with high magnetic permeability, the backsideshield wire 112 bs draws in the magnetic fields from the first andsecond electronic 104, 106 and provides a path around the first andsecond electronic components 104, 106. A high magnetic permeability may,for example, be a material having a magnetic permeability greater thanabout 1.0×10⁻² Henries per meter (H/m), 2.5×10-2 H/m, or some othersuitable value. Non-limiting examples of materials with high magneticpermeabilities include, for example, nickel-iron alloys.

In some embodiments, the backside shield wire 112 bs blocks electricfields from the first and second electronic components 104, 106 by atleast partially canceling the electric fields. For example, the electricfields from the first and second electronic components 104, 106 mayinduce a current in the backside shield wire 112 bs that causesdisplacement of charge inside the backside shield wire 112 bs. Thisdisplacement of charge may, in turn, cancel the electric fields from thefirst and second electronic components 104, 106 and hence prevent theelectric fields from passing through the backside shield wire 112 bs.

The backside shield wire 112 bs has a pair of opposite sidewalls (atleast when viewed in profile) and, in some embodiments, the first and/orsecond electronic component(s) 104, 106 is/are laterally between andlaterally spaced from the opposite sidewalls. As such, in someembodiments, the backside shield wire 112 bs substantially (orcompletely) covers the second electronic component 106 and/or wouldsubstantially (or completely) cover the first electronic component 104if the 3DIC was flipped vertically. In some embodiments, the backsideshield wire 112 bs is electrically floating. For example, the backsideshield wire 112 bs may be completely surrounded by a dielectric and/ormay be completely spaced from surrounding wires and/or vias. In someembodiments, the backside shield wire 112 bs is or comprises copper,aluminum copper, some other suitable metal(s), or any combination of theforegoing.

The first IC chip 108 comprises a first substrate 114, a first frontsideinterconnect structure 116, a backside interconnect structure 118, and afirst bond structure 120. The first frontside interconnect structure 116overlies the first substrate 114 on a frontside 114 f of the firstsubstrate 114. The backside interconnect structure 118 and the firstbond structure 120 underlie the first substrate 114 on a backside 114 bof the first substrate 114, opposite the frontside 114 f of the firstsubstrate 114. Further, the backside interconnect structure 118 isbetween the first substrate 114 and the first bond structure 120. Thefirst substrate 114 may, for example, be a bulk monocrystalline siliconsubstrate or some other suitable semiconductor substrate.

The second IC chip 110 comprises a second substrate 122, a secondfrontside interconnect structure 124, and a second bond structure 126.The second frontside interconnect structure 124 and the second bondstructure 126 overlie the second substrate 122 on a frontside 122 f ofthe second substrate 122. Further, the second frontside interconnectstructure 124 is between the second bond structure 126 and the secondsubstrate 122. Similar to the first substrate 114, the second substrate122 may, for example, be a bulk monocrystalline silicon substrate orsome other suitable semiconductor substrate.

While not shown, the first and second frontside interconnect structures116, 124, the backside interconnect structure 118, and the first andsecond bond structures 120 at least partially provide electricalcoupling between electronic components in the 3DIC. The first and secondfrontside interconnect structures 116, 124 each comprise an alternatingstack of wires and vias defining conductive paths from the electroniccomponents. Similarly, the backside interconnect structure 118 comprisesan alternating stack of wires and vias defining conductive paths. Thefirst and second bond structures 126 bond and electrically couple thebackside interconnect structure 118 to the second frontside interconnectstructure 124. Additionally, while not shown, conductive features extendthrough the first substrate 114 to electrically couple the firstfrontside interconnect structure 116 to the backside interconnectstructure 118.

With reference to FIG. 2, a top layout 200 of some embodiments of thebackside shield wire 112 bs of FIG. 1 and the first and secondelectronic components 104, 106 of FIG. 1 is provided. The backsideshield wire 112 bs completely surrounds the first and second electroniccomponents 104, 106 and, when viewed in profile, is between andcompletely separates the first electronic component 104 from the secondelectronic component 106. As above, the backside shield wire 112 bs isconfigured to block magnetic and/or electric fields from passing fromthe first electronic component 104 to the second electronic component106 and vice versa. This prevents the first and second electroniccomponents 104, 106 from disturbing each other.

The first and second electronic components 104, 106 are inductors andhave the same spiral-shaped top layout. Other top layouts are, however,amenable in alternative embodiments. Further, the first and secondelectronic components 104, 106 completely overlap, such that the firstand second electronic components 104, 106 are shown by the same element.The first and second electronic components 104, 106 may, for example, beor comprise copper, aluminum copper, some other suitable metal(s), orany combination of the foregoing. In some embodiments, the first andsecond electronic components 104, 106 are or comprise the same materialas the backside shield wire 112 bs.

With reference to FIG. 3A, a cross-sectional view 300A of somealternative embodiments of the 3DIC of FIG. 1 is provided in which thebackside shield wire 112 bs is electrically coupled to the firstfrontside interconnect structure 116. Such electrical coupling isachieved by backside shield vias 302 bs in the backside interconnectstructure 118 and through substrate shield vias 304 s in the firstsubstrate 114. The backside shield vias 302 bs extend from the backsideshield wire 112 bs to the through substrate shield vias 304 s. Thethrough substrate shield vias 304 s extend from the backside shield vias302 bs to frontside shield wires 112 fs in the first frontsideinterconnect structure 116. In some embodiments, during operation of the3DIC, the backside shield wire 112 bs is electrically coupled to ground(as illustrated) or otherwise biased at the first frontside interconnectstructure 116.

The backside shield vias 302 bs, the through substrate shield vias 304s, and the frontside shield wires 112 fs are conductive and may, forexample, be or comprise copper, aluminum copper, some other suitablemetal(s), or any combination of the foregoing. In some embodiments, thebackside shield vias 302 bs are integrated with the backside shield wire112 bs. The through substrate shield vias 304 s are separated from thefirst substrate 114 by individual shield via dielectric layers 306 s.The shield via dielectric layers 306 s may be or comprise, for example,silicon oxide and/or some other suitable dielectric(s).

With reference to FIG. 3B, a cross-sectional view 300B of somealternative embodiments of the 3DIC of FIG. 3A is provided in whichdoped shield channels 308 s are used in place of the through substrateshield vias 304 s. The doped shield channels 308 s are doped regions ofthe first substrate 114 having an opposite doping type as a bulk region114 br of the first substrate 114, so as to create PN junctions with thebulk region 114 br. The PN junctions lead to depletion regions along thedoped shield channels 308 s that provide electrical isolation betweenthe doped shield channels 308 s and the bulk region 114 br of the firstsubstrate 114. The first substrate 114 may, for example, be a bulkmonocrystalline silicon substrate or some other suitable semiconductorsubstrate. The doped shield channels 308 s and the bulk region 114 br ofthe first substrate 114 may, for example, respectively be N-type andP-type or vice versa.

The doped shield channels 308 s extend from the backside shield vias 302bs, through the first substrate 114, to frontside shield vias 302 fs.The frontside shield vias 302 fs extend from the doped shield channels308 s to the frontside shield wires 112 fs. The frontside shield vias302 fs are conductive and may, for example, be or comprise metal and/orsome other suitable conductive material(s).

With reference to FIG. 3C, a cross-sectional view 300C of somealternative embodiments of the 3DIC of FIG. 3B is provided in which thedoped shield channels 308 s are separated from the bulk region 114 br ofthe first substrate 114 by individual doped shield wells 310 s. Inalternative embodiments, the doped shield channels 308 s are separatedfrom the bulk region 114 br of the first substrate 114 by a shared dopedshield well. The doped shield well 310 s are doped regions of the firstsubstrate 114. Further, the doped shield channels 308 s and the bulkregion 114 br of the first substrate 114 have a first doping type,whereas the doped shield wells 310 s have a second doping type oppositethe first doping type. For example, the doped shield channels 308 s andthe bulk region 114 br of the first substrate 114 may be N-type, whereasthe doped shield wells 310 s may be P-type, or vice versa.

With reference to FIG. 4, a cross-sectional view 400 of some alternativeembodiments of the 3DIC of FIG. 1 is provided in which a doped shield402 is used in place of the backside shield wire 112 bs to blockmagnetic and/or electric fields from the first and second electroniccomponents 104, 106. The doped shield 402 is a doped region of the firstsubstrate 114 having an opposite doping type as adjoining and/orneighboring regions of the first substrate 114. For example, the dopedshield 402 may have an opposite doping type as the bulk region 114 br ofthe first substrate 114. As another example, the doped shield 402 mayhave an opposite doping type as a doped shield well (not shown) that isin the first substrate 114 and that surrounds the doped shield 402. Thedoped shield 402 and the bulk region 114 br of the first substrate 114may, for example, respectively be N-type and P-type or vice versa.

As with the backside shield wire 112 bs of FIG. 1, the doped shield 402is configured to block magnetic and/or electric fields from passing fromthe first electronic component 104 to the second electronic component106 and vice versa. Absent the doped shield 402, the magnetic and/orelectric fields from the first electronic component 104 may, forexample, cause noise and/or other disturbances at the second electroniccomponent 106 and vice versa. Disturbances at the first and secondelectronic components 104, 106 may, for example, negatively impactoperation of the 3DIC. For example, the disturbances may shift operatingparameters of the 3DIC out of specification and/or otherwise degradeperformance of the 3DIC.

In some embodiments, the doped shield 402 blocks magnetic fields fromthe first and second electronic components 104, 106 by eddy-currentlosses. An example of how this occurs is described above for thebackside shield wire 112 bs of FIG. 1. Further, in some embodiments, thebackside shield wire 112 bs blocks electric fields from the first andsecond electronic components 104, 106 by at least partially cancelingthe electric fields. An example of how this occurs is also describedabove for the backside shield wire 112 bs of FIG. 1.

The doped shield 402 has a pair of opposite sidewalls (at least whenviewed in profile) and, in some embodiments, the first and/or secondelectronic component(s) 104, 106 is/are laterally between and laterallyspaced from the opposite sidewalls. As such, in some embodiments, thedoped shield 402 substantially (or completely) covers the secondelectronic component 106 and/or would substantially (or completely)cover the first electronic component 104 if the 3DIC was flippedvertically. In some embodiments, the doped shield 402 has a high dopingconcentration and hence a high conductivity. A high doping concentrationmay, for example, be between about 10¹⁷-10²⁰ atoms per cubic centimeter(cm³), greater than about 10¹⁷ atoms/cm³, or some other suitable value.In some embodiments, the doped shield 402 is electrically floating. Inalternative embodiments, the doped shield 402 is electrically biased toground or some other suitable voltage.

In some embodiments, a shield isolation structure 404 extends throughthe first substrate 114 and laterally separates the doped shield 402from a remainder of the first substrate 114. The shield isolationstructure 404 may, for example, be or comprise a trench isolationstructure or some other suitable isolation structure. Further, theshield isolation structure 404 may, for example, be or comprise siliconoxide and/or some other suitable dielectric(s).

With reference to FIG. 5, a top layout 500 of some embodiments of thedoped shield 402 of FIG. 4 and the first and second electroniccomponents 104, 106 of FIG. 4 is provided. The doped shield 402completely surrounds the first and second electronic components 104,106, and is completely surrounded by the shield isolation structure 404.Further, when viewed in profile, the doped shield 402 is between andcompletely separates the first electronic component 104 from the secondelectronic component 106. The first and second electronic components104, 106 may, for example, be as described with regard to FIG. 2.

With reference to FIG. 6, a cross-sectional view 600 of some alternativeembodiments of the 3DIC of FIG. 1 is provided in which the shieldstructure 102 further comprises the doped shield 402 directly betweenthe first and second electronic components 104, 106. The doped shield402 is a doped region of the first substrate 114 and is configured toblock magnetic and/or electric fields from passing from the firstelectronic component 104 to the second electronic component 106 and viceversa. In some embodiments, the doped shield 402 is laterally separatedfrom a remainder of the first substrate 114 by the shield isolationstructure 404. The doped shield 402 and/or the shield isolationstructure 404 may, for example, be as illustrated and/or described withregard to FIG. 4.

With reference to FIG. 7, a top layout 700 of some embodiments of theshield structure 102 of FIG. 6 and the first and second electroniccomponents 104, 106 of FIG. 6 is provided. The backside shield wire 112bs and the doped shield 402 may, for example, respectively be asillustrated and/or described with regard to FIGS. 2 and 5. Additionally,the first and second electronic components 104, 106 may, for example, beas illustrated and/or described with regard to FIGS. 2 and 5.

With reference to FIGS. 8A-8C, cross-sectional views 800A-800C of somealternative embodiments of the 3DIC of FIG. 6 are provided in whichelectrical coupling to the backside shield wire 112 bs is varied. FIGS.8A-8C provide the electrical coupling as illustrated and/or describedrespectively with regard to FIGS. 3A-3C. For example, FIG. 8A providesthe electrical coupling using through substrate shield vias 304 s inFIG. 3A, whereas FIGS. 8B and 8C provide the electrical coupling usingdoped shield channels 308 s in FIGS. 3B and 3C.

With reference to FIG. 9, an expanded cross-sectional view 900 of somemore detailed embodiments of the 3DIC of FIG. 1 is provided in which thefirst and second frontside interconnect structures 116, 124, thebackside interconnect structure 118, and the first and second bondstructures 120, 126 are shown in greater detail. Further, a padstructure 902 is along a top of the 3DIC and is electrically coupled tothe first frontside interconnect structure 116. FIG. 1 may, for example,correspond to box A.

The first and second frontside interconnect structures 116, 124 and thebackside interconnect structure 118 comprise alternating stacks of wires112 and vias 302 defining conductive paths. Note that wires and viaselectrically coupled to and/or defining the shield structure 102 may,for example, be more specifically referred to as shield wires and shieldvias. The wires 112 and the vias 302 are surrounded by correspondinginterconnect dielectric layers 904. The interconnect dielectric layers904 may be or comprise, for example, silicon oxide, a low k dielectric,some other suitable dielectric(s), or any combination of the foregoing.The wires 112 and the vias 302 may be or comprise copper and/or someother suitable metal(s).

Through substrate vias (TSVs) 304 are in the first substrate 114 andextend through the first substrate 114 to electrically couple the firstfrontside interconnect structure 116 to the backside interconnectstructure 118. The TSVs 304 are conductive and are separated from thefirst substrate 114 by via dielectric layers 306. The TSVs 304 and thevia dielectric layers 306 may, for example, respectively be as thethrough substrate shield vias 304 s of the FIG. 3A and the shield viadielectric layers 306 s of FIG. 3A are illustrated and/or described.

The first and second bond structures 120, 126 bond and electricallycouple the backside interconnect structure 118 to the second frontsideinterconnect structure 124 at a hybrid bond. In alternative embodiments,micro bumps and/or other suitable bonding structure(s) may be used. Thefirst and second bond structures 120, 126 comprise individual bond pads906 contacting at the hybrid bond, and further comprise individual bondcontacts 908 extending form the bond pads 906 respectively to thebackside interconnect structure 118 and the second frontsideinterconnect structure 124. The bond pads 906 and the bond contacts 908are surrounded and electrically isolated by corresponding bonddielectric layers 910. The bond dielectric layers 910 contact at thehybrid bond and may be or comprise, for example, silicon oxide and/orsome other suitable dielectric(s). The bond pads 906 and the bondcontacts 908 may be or comprise copper and/or some other suitablemetal(s).

The pad structure 902 overlies and is electrically coupled to the firstfrontside interconnect structure 116. A first passivation layer 912 isbetween the pad structure 902 and the first frontside interconnectstructure 116, and the pad structure 902 protrudes through the firstpassivation layer 912 to the first frontside interconnect structure 116.A second passivation layer 914 lines sidewalls of and partially coversthe pad structure 902. The pad structure 902 may be or comprise aluminumand/or some other suitable metal(s). The first and second passivationlayers 912, 914 may be or comprise silicon oxide, silicon nitride, someother suitable dielectric(s), or any combination of the foregoing.

A first etch stop layer 916 and a second etch stop layer 918 arerespectively along top surfaces of the first and second frontsideinterconnect structures 116, 124. The first etch stop layer 916separates the first and second passivation layers 912, 914 from thefirst frontside interconnect structure 116. The second etch stop layer918 separates the second bond structure 126 from the second frontsideinterconnect structure 124. The first and second etch stop layers 916,918 each comprises a different dielectric than an overlying andadjoining dielectric layer. The first and second etch stop layers 916,918 may be or comprise silicon nitride, silicon carbide, some othersuitable dielectric(s), or any combination of the foregoing.

While the shield structure 102 is illustrated using embodiments of theshield structure 102 in FIG. 1, embodiments of the shield structure 102in any one of FIGS. 3A-3C, 4, 6, and 8A-8C may alternatively be used.For example, the shield structure 102 may additionally or alternativelyinclude the doped shield 402 as in FIGS. 4 and 6. As another example,the shield structure 102 may be electrically coupled to the firstfrontside interconnect structure 116 as illustrated in any one of FIGS.3A-3C and 8A-8C. Similarly, while the portion of the 3DIC in box A may,for example, correspond to FIG. 1, the portion may alternatively bemodified to correspond to any one of FIGS. 3A-3C, 4, 6, and 8A-8C.

With reference to FIG. 10A, a cross-sectional view 1000A of somealternative embodiments of the 3DIC of FIG. 9 is provided in which apair of shield bond pads 906 s in the first and second bond structures120, 126 is used in place of the backside shield wire 112 bs to blockmagnetic and/or electric fields from the first and second electroniccomponents 104, 106. The shield bond pads 906 s are as the bond pads 906are described with regard to FIG. 9, except that the shield bond pads906 s define the shield structure 102.

With reference to FIG. 10B, a cross-sectional view 1000B of somealternative embodiments of the 3DIC of FIG. 9 is provided in which afrontside shield wire 112 fs in the first frontside interconnectstructure 116 is used in place of the backside shield wire 112 bs toblock magnetic and/or electric fields from the first and secondelectronic components 104, 106. In alternative embodiments, asillustrated in a cross-sectional view 1000C of FIG. 10C, the frontsideshield wire 112 fs is in the second frontside interconnect structure124.

While the shield structures 102 in FIGS. 10A-10C are not shown as beingelectrically coupled to the first frontside interconnect structure 116,the shield structures 102 may be electrically coupled to the firstfrontside interconnect structure 116 in alternative embodiments. Forexample, the shield structure 102 of FIG. 10A may be electricallycoupled to the first frontside interconnect structure 116 as illustratedfor the neighboring bond pads 906. As another example, the shieldstructure 102 of FIG. 10B may be electrically coupled to the firstfrontside interconnect structure 116 by a via in the first frontsideinterconnect structure 116. As another example, the shield structure 102of FIG. 10C may be electrically coupled to the first frontsideinterconnect structure 116 as illustrated for the neighboring wires 112in the second frontside interconnect structure 124. Additionally, whilethe shield structures 102 in FIGS. 10A-10C are not shown as includingthe doped shield 402 at FIG. 4, the shield structures 102 may includethe doped shield 402 in alternative embodiments.

While the 3DICs of FIGS. 10A-10C illustrate TSVs 304 electricallycoupling the first frontside interconnect structure 116 to the backsideinterconnect structure 118, doped channels may instead be used inalternative embodiments. The doped channels may, for example, be asillustrated and/or described in any one of FIGS. 3B, 3C, 8B, and 8C.

With reference to FIG. 11A, a cross-sectional view 1100A of someembodiments of a 3DIC comprising an interior region IR and a peripheralregion PR is provided in which the shield structure 102 of FIG. 3B is atthe peripheral region PR and is directly between the first and secondelectronic components 104, 106. Further, the doped channels 308electrically couple the first frontside interconnect structure 116 tothe backside interconnect structure 118.

The peripheral region PR is at a periphery the 3DIC and providesexternal electrical coupling to the 3DIC by way of the pad structure 902and other pad structures (not shown). The interior region IR is at aninterior of the 3DIC and accommodates semiconductor devices 1102configured to perform logic functions and/or other suitable functions.The semiconductor devices 1102 may be or comprise, for example,metal-oxide semiconductor field-effect transistor (MOSFETs) and/or someother suitable semiconductor devices.

With reference to FIG. 11B, a cross-sectional view 1100B of somealternative embodiments of the 3DIC of FIG. 11A is provided in which theshield structure 102 of FIG. 8A is directly between the first and secondelectronic components 104, 106 instead of the shield structure 102 ofFIG. 3B. Further, the TSVs 304 electrically couple the first frontsideinterconnect structure 116 to the backside interconnect structure 118instead of the doped channels 308.

While FIG. 11A is illustrated and described with embodiments of theshield structure in FIG. 3B, the shield structure 102 in any one ofFIGS. 1, 3A, 3C, 4, 6, 8A-8C, 9, and 10A-10C may alternatively be used.Similarly, while FIG. 11B is illustrated and described with embodimentsof the shield structure in FIG. 8A, the shield structure 102 in any oneof FIGS. 1, 3A-3C, 4, 6, 8B, 8C, 9, and 10A-10C may alternatively beused. While FIGS. 1, 2, 3A-3C, 4, 5, 6, 7, 8A-8C, 9, 10A-10C, 11A, and11B are described as illustrating 3DICs, these figures may moregenerally or alternatively be described as illustrating semiconductorpackaging devices.

With reference to FIGS. 12-26, a series of cross-sectional views1200-2600 of some embodiments of a method for forming a 3DIC (or asemiconductor packaging device) is provided in which a shield structurecomprises a backside shield wire directly between electronic components.The 3DIC being formed may, for example, correspond to the 3DIC of FIG.11A.

As illustrated by the cross-sectional view 1200 of FIG. 12, a firstsubstrate 114 is doped from a frontside 114 f of the first substrate 114to form doped channels 308 at a peripheral region PR of the 3DIC beingformed. The doped channels 308 extend partially through the firstsubstrate 114 and are doped regions of the first substrate 114 having anopposite doping type as a bulk region 114 br of the first substrate 114.For example, the doped channels 308 may be N-type and the bulk region114 br may be P-type or vice versa. The first substrate 114 may, forexample, be a bulk silicon substrate or some other suitablesemiconductor substrate. In some embodiments, a process for forming thedoped channels 308 comprises: 1) forming a mask (not shown) on thefrontside 114 f of the first substrate 114; 2) implanting dopants intothe frontside 114 f of the first substrate 114 with the mask in place;and 3) removing the mask. The mask may, for example, be or comprisephotoresist and/or a hard mask material.

Also illustrated by the cross-sectional view 1200 of FIG. 12,semiconductor devices 1102 are formed on the frontside 114 f of thefirst substrate 114. The semiconductor devices 1102 are formed at aninterior region IR of the 3DIC being formed and may, for example, beMOSFETs and/or some other suitable semiconductor devices.

As illustrated by the cross-sectional view 1300 of FIG. 13, a firstfrontside interconnect structure 116 is partially formed on thefrontside 114 f of the first substrate 114. The first frontsideinterconnect structure 116 comprises an interlayer dielectric (ILD)layer 904 ild and a plurality of intermetal dielectric (IMD) layers 904imd stacked over the ILD layer 904 ild. Further, the first frontsideinterconnect structure 116 comprises a plurality of wires 112 and aplurality of vias 302 alternatingly stacked in the ILD and IMD layers904 ild, 904 imd. The wires 112 and the vias 302 are conductive anddefine conductive paths leading from the doped channels 308 and thesemiconductor devices 1102.

In some embodiments, a process for partially forming the first frontsideinterconnect structure 116 comprises: 1) forming a bottommost level ofthe vias 302 by a single damascene process; 2) forming a bottommostlevel of the wires 112 by the single damascene process; and 3)repeatedly performing a dual damascene process to form additional wireand via levels. Other processes are, however, amenable. The singledamascene process may, for example, comprise: 1) depositing a dielectriclayer (e.g., the ILD layer 904 ild or one of the IMD layers 904 imd); 2)patterning the dielectric layer to form openings for a single level ofwires or vias; 3) depositing a metal layer in the openings; and 4)performing a planarization into the conductive layer until a top surfaceof the conductive layer is even with a top surface of the dielectriclayer. The dual damascene process may, for example, be as the singledamascene process is described except that the patterning at 3) formsopenings for a level of wires and a level of vias. Other processes are,however, amenable for the single and dual damascene processes.

As illustrated by the cross-sectional view 1400 of FIG. 14, a top IMDlayer 904 imd′ is formed over the other IMD layers 904 imd and ispatterned to form interconnect openings 1402 for a level of wires and alevel of vias. The patterning may, for example, be performed by aphotolithography/etching process or some other suitable patterningprocess.

As illustrated by the cross-sectional view 1500 of FIG. 15, the top IMDlayer 904 imd′ is patterned to form a first electronic component opening1502. Note that while the first electronic component opening 1502 isshown as being formed after the interconnect openings 1402 of FIG. 14,the first electronic component opening 1502 may be formed before theinterconnect openings 1402 of FIG. 14 in alternative embodiments. Thefirst electronic component opening 1502 may, for example, correspond toan inductor or some other suitable electronic component being formed.The first electronic component opening 1502 may, for example, have thesame top layout as the first electronic component 104 in any one ofFIGS. 2, 5, and 7. Other top layouts are, however, amenable.

In some embodiments, a process for forming the first electroniccomponent opening 1502 comprise: 1) forming a mask 1504 over the top IMDlayer 904 imd′; 2) performing an etch into the top IMD layer 904 imd′with the mask 1504 in place; and 3) removing the mask 1504. Otherprocesses are, however, amenable. The mask 1504 may, for example, be orcomprise photoresist and/or a hard mask material. In some embodiments,the mask 1504 is photoresist that is patterned by photolithography usinga photoreticle or photomask.

As illustrated by the cross-sectional view 1600 of FIG. 16, a conductivelayer 1602 is deposited in the first electronic component opening 1502of FIG. 15 and the interconnect openings 1402 of FIG. 14. The conductivelayer 1602 may be or comprise, for example, metal and/or some othersuitable conductive material(s).

As illustrated by the cross-sectional view 1700 of FIG. 17, aplanarization is performed into the conductive layer 1602 (see FIG. 16)until a top surface of the conductive layer 1602 is about even with atop surface of the top IMD layer 904 imd′. The planarization forms afirst electronic component 104 and also forms wires 112 and vias 302 inthe top IMD layer 904 imd′. The first electronic component 104 may, forexample, be an inductor or some other suitable electronic component. Theplanarization may, for example, be performed by a chemical mechanicalpolish (CMP) or some other suitable planarization.

Also illustrated by the cross-sectional view 1700 of FIG. 17, a firstetch stop layer 916 is formed over the top IMD layer 904 imd′ and thefirst electronic component 104.

As illustrated by the cross-sectional view 1800 of FIG. 18, thestructure of FIG. 17 is flipped vertically and bonded to a carriersubstrate 1802. The carrier substrate 1802 may, for example, be a bulksilicon substrate or some other suitable substrate. The bonding may, forexample, be performed by fusion bonding or some other suitable bonding.

As illustrated by the cross-sectional view 1900 of FIG. 19, the firstsubstrate 114 is thinned from a backside 114 b of the first substrate114, opposite the frontside 114 f of the first substrate 114. Thethinning reduces a thickness T of the first substrate 114 andadditionally exposes the doped channels 308. The thinning may, forexample, be performed by a CMP or some other suitable planarization.

Also illustrated by the cross-sectional view 1900 of FIG. 19, a backsideinterconnect structure 118 is formed on the backside 114 b of the firstsubstrate 114. The backside interconnect structure 118 comprises aninterconnect dielectric layer 904, and further comprises a plurality ofwires 112 and a plurality of vias 302. The wires 112 and the vias 302are stacked and define conductive paths leading from the doped channels308. While only one level of wires and one level of vias is shown in thebackside interconnect structure 118, additional levels of vias and/oradditional levels of wires are amenable in alternative embodiments.

In some embodiments (as illustrated), the backside interconnectstructure 118 is formed by a dual damascene process. In alternativeembodiments, the illustrated wire level and the illustrated via levelare individually formed by a single damascene process. Non-limitingexamples of the dual and single damascene processes are described withregard to FIG. 13. Notwithstanding the aforementioned processes forforming the backside interconnect structure 118, other processes are,however, amenable.

Upon completion of the backside interconnect structure 118, a shieldstructure 102 resides directly over the first electronic component 104.The shield structure 102 comprises a backside shield wire 112 bs andmay, for example, be as described with regard to FIG. 3B. Further, theshield structure 102 and the first electronic component 104 may, forexample, have top layouts as shown in any one of FIGS. 2, 5, and 7.Other top layouts are, however, amenable. As discussed in greaterdetail, the backside shield wire 112 bs and hence the shield structure102 are configured to block magnetic and/or electric fields from thefirst electronic component 104 from disturbing an overlying electroniccomponent (not shown).

As illustrated by the cross-sectional view 2000 of FIG. 20, a first bondstructure 120 is formed on the backside interconnect structure 118. Thefirst bond structure 120 comprises a bond dielectric layer 910, andfurther comprises bond pads 906 and bond contacts 908 stacked in thebond dielectric layer 910. The bond contacts 908 extend from the bondpads 906 to the wires 112 in the backside interconnect structure 118 toprovide electrical coupling between the first bond structure 120 and thebackside interconnect structure 118. The first bond structure 120 may,for example, be formed according to any one of the processes describedabove for forming the backside interconnect structure 118 or accordingto any other suitable process.

As illustrated by the cross-sectional view 2100 of FIG. 21,semiconductor devices 1102 are formed on a frontside 122 f of a secondsubstrate 122. The semiconductor devices 1102 are formed at the interiorregion IR of the 3DIC being formed and may, for example, be MOSFETsand/or some other suitable semiconductor devices.

Also illustrated by the cross-sectional view 2100 of FIG. 21, a secondfrontside interconnect structure 124 is partially formed on thefrontside 122 f of the second substrate 122. The second frontsideinterconnect structure 124 may, for example, be as the first frontsideinterconnect structure 116 is illustrated and/or described, except for adifferent arrangement of wires and vias. Further, the second frontsideinterconnect structure 124 may, for example, be formed according to theacts at FIGS. 13 and 14.

As illustrated by the cross-sectional view 2200 of FIG. 22, the top IMDlayer 904 imd′ is patterned to form a second electronic componentopening 2202. Note that while the second electronic component opening2202 is shown as being formed after the interconnect openings 1402 ofFIG. 21, the second electronic component opening 2202 may be formedbefore the interconnect openings 1402 of FIG. 21 in alternativeembodiments. The second electronic component opening 2202 may, forexample, correspond to an inductor or some other suitable electronicdevice being formed. The second electronic component opening 2202 may,for example, have the same top layout as the second electronic componentopening 2202 in any one of FIG. 2, 5, or 7. Other top layouts are,however, amenable.

In some embodiments, a process for forming the second electroniccomponent opening 2202 comprise: 1) forming a mask 2204 over the top IMDlayer 904 imd′; 2) performing an etch into the top IMD layer 904 imd′with the mask 2204 in place; and 3) removing the mask 2204. Otherprocesses are, however, amenable. The mask 2204 may, for example, be orcomprise photoresist and/or a hard mask material. In some embodiments,the mask 2204 is photoresist that is patterned by photolithography usingthe same photoreticle or photomask used to pattern the mask 1404 of FIG.14. A photoreticle or photomask is expensive, such that reusing aphotoreticle or photomask is a substantial cost savings.

As illustrated by the cross-sectional view 2300 of FIG. 23, a secondelectronic component 106 is formed in the second electronic componentopening 2202. Further, wires 112 and vias 302 are formed in theinterconnect openings 1402 of FIG. 21. The second electronic component106 may, for example, be an inductor or some other suitable electroniccomponent. In some embodiments, the second electronic component 106 isthe same type of electronic component as the first electronic component104 of FIG. 17 and/or has a same top layout as the first electroniccomponent 104 of FIG. 17.

In some embodiments, a process for forming the second electroniccomponent 106, the wires 112, and the vias 302 comprises: 1) depositinga conductive layer in the second electronic component opening 2202 ofFIG. 22 and the interconnect openings 1402 of FIG. 21; and 2) performinga planarization into the conductive layer until a top surface of theconductive layer is about even with a top surface of the top IMD layer904 imd′. An example of this process is illustrated and/or describedwith regard to FIGS. 16 and 17 and, in alternative embodiments, othersuitable processes may be used.

Also illustrated by the cross-sectional view 2300 of FIG. 23, a secondetch stop layer 918 and a second bond structure 126 are formed over thetop IMD layer 904 imd′ and the second electronic component 106. Thesecond bond structure 126 overlies the second etch stop layer 918 andprotrudes through the second etch stop layer 918 to electrically coupledwith the second frontside interconnect structure 124. The second bondstructure 126 may, for example, be formed as illustrated and/ordescribed for the first bond structure 120 of FIG. 20. Further, in someembodiments, a layout of the bond pads 906 in the second bond structure126 matches a layout of the bond pads 906 in the first bond structure120.

As illustrated by the cross-sectional view 2400 of FIG. 24, thestructure of FIG. 20 (also known as a first IC chip 108) is flippedvertically and bonded to the structure of FIG. 23 (also known as asecond IC chip 110). The bonding is performed by hybrid bonding, suchthat bonding occurs at an interface at which the bond pads 906 of thefirst and second bond structures 120, 126 directly contact and at aninterface at which the bond dielectric layers 910 of the first andsecond bond structures 120, 126 directly contact. In alternativeembodiments, some other type of bonding and/or bond structures may beemployed.

The bonding is performed so that the backside 114 b of the firstsubstrate 114 and the frontside 122 f of the second substrate 122 faceeach other. In other words, the bonding is frontside-to-backsidebonding. Further, the bonding is performed so that the first electroniccomponent 104 directly overlies the shield structure 102 and the secondelectronic component 106. The first electronic component 104 may, forexample, directly overlie the second electronic component 106 due to thefrontside-to-backside bonding at least when the same photoreticle orphotomask is used to form the first and second electronic components104, 106.

Because the shield structure 102 is directly between the first andsecond electronic components 104, 106, the shield structure 102 blocksmagnetic and/or electric fields from passing from the first electroniccomponent 104 to the second electronic component 106 and vice versa.Absent the shield structure 102, the magnetic and/or electric fieldsfrom the first electronic component 104 may, for example, cause noiseand/or other disturbances at the second electronic components 106 andvice versa. Disturbances at the first and second electronic components104, 106 may, in turn, negatively impact operation of the 3DIC. Forexample, the disturbances may transfer to a remainder of the 3DIC,thereby shifting operating parameters of the 3DIC out of specificationand/or otherwise degrade performance of the 3DIC.

As illustrated by the cross-sectional view 2500 of FIG. 25, the carriersubstrate 1802 of FIG. 24 is removed from the frontside 114 f of thefirst substrate 114, thereby exposing the first etch stop layer 916. Theremoval may, for example, be performed by a grinding process, a CMP, anetch back, some other suitable removal process, or any combination ofthe foregoing.

As illustrated by the cross-sectional view 2600 of FIG. 26, a firstpassivation layer 912 is deposited over the first frontside interconnectstructure 116. A pad structure 902 is formed over the first passivationlayer 912 and protrudes through the first passivation layer 912 to awire 112 in the first frontside interconnect structure 116. A secondpassivation layer 914 is deposited over the first passivation layer 912and the pad structure 902 and is subsequently patterned to at leastpartially expose a top surface of the pad structure 902.

While FIGS. 12-26 are described with reference to a method, it will beappreciated that the structures shown in FIGS. 12-26 are not limited tothe method but rather may stand alone separate of the method. WhileFIGS. 12-26 are described as a series of acts, it will be appreciatedthat the order of the acts may be altered in other embodiments. WhileFIGS. 12-26 are illustrated and described as a specific set of acts,some acts that are illustrated and/or described may be omitted in otherembodiments. Further, acts that are not illustrated and/or described maybe included in other embodiments. By omitting and/or adding acts,alternative embodiments of the method may form the 3DIC with the shieldstructure 102 in any one of FIGS. 1, 3A, 3C, 4, 6, 8A-8C, 9, and10A-10C. For example, by at least omitting formation of TSVs 304 at theshield structure 102, the method may form the 3DIC with the shieldstructure 102 of FIG. 1.

With reference to FIG. 27, a block diagram 2700 of some embodiments ofthe method of FIGS. 12-26 is provided.

At 2702, a first substrate is doped to form doped channels extendingpartially through the first substrate from a frontside of the firstsubstrate. See, for example, FIG. 12.

At 2704, a first frontside interconnect structure is formed on thefrontside of the first substrate, where the first frontside interconnectstructure is electrically coupled to the doped channels and comprises afirst electronic component. See, for example, FIGS. 13-17.

At 2706, a carrier substrate is bonded to the frontside of the firstsubstrate, such that the first frontside interconnect structure isbetween the carrier substrate and the first substrate. See, for example,FIG. 18.

At 2708, the first substrate is thinned from a backside of the firstsubstrate, opposite the frontside of the first substrate, to expose thedoped channels. See, for example, FIG. 19.

At 2710, a backside interconnect structure is formed on the backside ofthe first substrate, where the backside interconnect structure iselectrically coupled to the doped channels and comprises a shield wirecompletely covering the first electronic component. See, for example,FIG. 19.

At 2712, a first bond structure is formed on and electrically coupled tothe backside interconnect structure. See, for example, FIG. 20.

At 2714, a second frontside interconnect structure is formed on a secondsubstrate, where the second frontside interconnect structure comprises asecond electronic component with a same layout as the first electroniccomponent. See, for example, FIGS. 21-23. The first and secondelectronic components may be, for example, inductors or some othersuitable electronic components. Further, the first and second electroniccomponents may, for example, be formed using the same photoreticle orphotomask to reduce costs.

At 2716, a second bond structure is formed on and electrically coupledto the second frontside interconnect structure. See, for example, FIG.23.

At 2718, the first and second bond structures are bonded together, suchthat the shield wire is directly between the first and second electroniccomponents and substantially (or completely) covers the secondelectronic component. See, for example, FIG. 24.

At 2720, the carrier substrate is removed. See, for example, FIG. 25.

At 2722, a pad structure is formed over and electrically coupled to thefirst frontside interconnect structure. See, for example, FIG. 26.

While the block diagram 2700 of FIG. 27 is illustrated and describedherein as a series of acts or events, it will be appreciated that theillustrated ordering of such acts or events is not to be interpreted ina limiting sense. For example, some acts may occur in different ordersand/or concurrently with other acts or events apart from thoseillustrated and/or described herein. Further, not all illustrated actsmay be required to implement one or more aspects or embodiments of thedescription herein, and one or more of the acts depicted herein may becarried out in one or more separate acts and/or phases.

With reference to FIGS. 28-36, a series of cross-sectional views2800-3600 of some embodiments of a method for forming a 3DIC (or asemiconductor packaging device) is provided in which a shield structurecomprises a backside shield wire and a doped shield directly betweenelectronic components. The 3DIC being formed may, for example,correspond to the 3DIC of FIG. 11B.

As illustrated by the cross-sectional view 2800 of FIG. 28, a firstsubstrate 114 is doped from a frontside 114 f of the first substrate 114to form a doped shield 402 at a peripheral region PR of the 3DIC beingformed. The doped shield 402 extends partially through the firstsubstrate 114 and is a doped region of the first substrate 114 having anopposite doping type as a bulk region 114 br of the first substrate 114.For example, the doped shield 402 may be N-type and the bulk region 114br may be P-type or vice versa. In some embodiments, a process forforming the doped shield 402 comprises: 1) forming a mask (not shown) onthe frontside 114 f of the first substrate 114; 2) implanting dopantsinto the frontside 114 f of the first substrate 114 with the mask inplace; and 3) removing the mask. The mask may, for example, be orcomprise photoresist and/or a hard mask material.

Also illustrated by the cross-sectional view 2800 of FIG. 28,semiconductor devices 1102 are formed on the frontside 114 f of thefirst substrate 114, at an interior region IR of the 3DIC being formed.

As illustrated by the cross-sectional view 2900 of FIG. 29, a firstfrontside interconnect structure 116, a first electronic component 104,and a first etch stop layer 916 are formed on the frontside 114 f of thefirst substrate 114. The first electronic component 104 is formed whilea top wire level of the first frontside interconnect structure 116 isformed and is formed directly over the doped shield 402. The first etchstop layer 916 is formed over the first frontside interconnect structure116 and the first electronic component 104. The first frontsideinterconnect structure 116, the first electronic component 104, and thefirst etch stop layer 916 may, for example, be as described and/orformed as described at FIGS. 13-17.

As illustrated by the cross-sectional view 3000 of FIG. 30, thestructure of FIG. 29 is flipped vertically and bonded to a carriersubstrate 1802. The bonding may, for example, be performed by fusionbonding or some other suitable bonding.

As illustrated by the cross-sectional view 3100 of FIG. 31, the firstsubstrate 114 is thinned from a backside 114 b of the first substrate114, opposite the frontside 114 f of the first substrate. The thinningreduces a thickness T of the first substrate 114 and may, for example,be performed by a CMP or some other suitable planarization.

Also illustrated by the cross-sectional view 3100 of FIG. 31, a shieldisolation structure 404 is formed extending through the first substrate114 and surrounding the doped shield 402. The shield isolation structure404 electrically isolates the doped shield 402 from portions of thefirst substrate 114 to sides of the doped shield 402 and may be orcomprise, for example, a dielectric and/or some other suitablematerial(s). In some embodiments, a process for forming the shieldisolation structure 404 comprises: 1) patterning the backside 114 b ofthe first substrate 114 to form a trench with a layout of the shieldisolation structure 404; 2) depositing a dielectric layer in the trench;and 3) performing a planarization into the dielectric layer until a topsurface of the dielectric layer is even with a top surface of the firstsubstrate 114.

As illustrated by the cross-sectional view 3200 of FIG. 32, a firstbackside interconnect dielectric layer 904 bs ₁ is formed covering theshield isolation structure 404 on the backside 114 b of the firstsubstrate 114. Further, TSVs 304 and via dielectric layers 306 areformed extending through the first backside interconnect dielectriclayer 904 bs ₁ and the first substrate 114. The via dielectric layers306 electrically separate the TSVs 304 from the first substrate 114, andthe TSVs 304 extend beyond the via dielectric layers 306 to wires 112 inthe first frontside interconnect structure 116.

In some embodiments, a process for forming the TSVs 304 and the viadielectric layers 306 comprises: 1) patterning the first backsideinterconnect dielectric layer 904 bs ₁ and the first substrate 114 toform via openings; 2) depositing a dielectric layer lining the viaopenings; 3) etching back the dielectric layer to form the viadielectric layers 306; 4) performing an etch into the first frontsideinterconnect structure 116 to extend the via openings to wires 112 inthe first frontside interconnect structure 116; 5) depositing aconductive layer filling a remainder of the via openings; and 6)performing a planarization into the conductive layer to form the TSVs304. Other processes are, however, amenable in other embodiments.

As illustrated by the cross-sectional view 3300 of FIG. 33, a backsideinterconnect structure 118 and a first bond structure 120 are formedcovering the first backside interconnect dielectric layer 904 bs ₁ onthe backside 114 b of first substrate 114. The backside interconnectstructure 118 may, for example, be as described and/or formed asdescribed at FIG. 19, except that the wires 112 and the vias 302 of thebackside interconnect structure 118 are formed in a second backsideinterconnect dielectric layer 904 bs ₂. The first bond structure 120may, for example, be as described and/or formed as described at FIG. 20.

Upon completion of the backside interconnect structure 118, a shieldstructure 102 resides directly over the first electronic component 104.The shield structure 102 comprises the doped shield 402 in the firstsubstrate 114 and further comprises a backside shield wire 112 bs in thebackside interconnect structure 118. The shield structure 102 may, forexample, be as described with regard to FIG. 8A. Further, the shieldstructure 102 and the first electronic component 104 may, for example,have top layouts as shown in FIG. 7. Other top layouts are, however,amenable. In alternative embodiments, the doped shield 402 is not formedand the shield structure 102 is limited to the backside shield wire 112bs for blocking magnetic and/or electric fields. A non-limiting exampleof such a shield structure is at FIG. 3A. In alternative embodiments,the backside shield wire 112 bs is not formed and the shield structure102 is limited to doped shield 402 for blocking magnetic and/or electricfields. A non-limiting example of such a shield structure is at FIG. 4.

As illustrated by the cross-sectional view 3400 of FIG. 34, at leastsemiconductor devices 1102, a second frontside interconnect structure124, a second electronic component 106, a second etch stop layer 918,and a second bond structure 126 are formed stacked on a frontside 122 fof a second substrate 122. The semiconductor devices 1102, the secondfrontside interconnect structure 124, the second electronic component106, the second etch stop layer 918, and the second bond structure 126may, for example, be as described at and/or formed as described at FIGS.21-23.

As illustrated by the cross-sectional view 3500 of FIG. 35, thestructure of FIG. 33 (also known as a first IC chip 108) is flippedvertically and bonded to the structure of FIG. 34 (also known as asecond IC chip 110). The bonding is performed so the backside 114 b ofthe first substrate 114 and the frontside 122 f of the second substrate122 face each other. Further, the bonding is performed so the firstelectronic component 104 directly overlies the shield structure 102 andthe second electronic component 106. Because the shield structure 102 isdirectly between the first and second electronic components 104, 106,the shield structure 102 blocks magnetic and/or electric fields frompassing between the first and second electronic components 104, 106. Thebonding may, for example, be performed as described at FIG. 24.

As illustrated by the cross-sectional view 3600 of FIG. 36, the carriersubstrate 1802 of FIG. 35 is removed from the frontside 114 f of thefirst substrate 114, thereby exposing the first etch stop layer 916.Further, a first passivation layer 912, a pad structure 902, and asecond passivation layer 914 are formed on the first etch stop layer916. The removal and the forming may, for example, be as described atFIGS. 25 and 26.

While FIGS. 28-36 are described with reference to a method, it will beappreciated that the structures shown in FIGS. 28-36 are not limited tothe method but rather may stand alone separate of the method. WhileFIGS. 28-36 are described as a series of acts, it will be appreciatedthat the order of the acts may be altered in other embodiments. WhileFIGS. 28-36 are illustrated and described as a specific set of acts,some acts that are illustrated and/or described may be omitted in otherembodiments. Further, acts that are not illustrated and/or described maybe included in other embodiments. By omitting and/or adding acts,alternative embodiments of the method may form the 3DIC with the shieldstructure 102 in any one of FIGS. 1, 3A-3C, 4, 6, 8B, and 8C. Forexample, by at least omitting formation of doped channels 308 at theshield structure 102, the method may form the 3DIC with the shieldstructure 102 of FIG. 6.

With reference to FIG. 37, a block diagram 3700 of some embodiments ofthe method of FIGS. 28-36 is provided.

At 3702, a first substrate is doped to form a doped shield extendingpartially through the first substrate from a frontside of the firstsubstrate. See, for example, FIG. 28.

At 3704, a first frontside interconnect structure is formed on thefrontside of the first substrate, where the first frontside interconnectstructure comprises a first electronic component overlying the dopedshield. See, for example, FIG. 29.

At 3706, a carrier substrate is bonded to the frontside of the firstsubstrate, such that the first frontside interconnect structure isbetween the carrier substrate and the first substrate. See, for example,FIG. 30.

At 3708, the first substrate is thinned from a backside of the firstsubstrate, opposite the frontside of the first substrate. See, forexample, FIG. 31.

At 3710, a shield isolation structure is formed extending through thefirst substrate, where the shield isolation structure surrounds andadjoins the doped shield. See, for example, FIG. 31.

At 3712, TSVs are formed extending through the first substrate andelectrically coupled with the first frontside interconnect structure.See, for example, FIG. 32.

At 3714, a backside interconnect structure is formed on the backside ofthe first substrate and electrically coupled to the TSVs, where thebackside interconnect structure comprises a shield wire substantially(or completely) covering the first electronic component and the dopedshield. See, for example, FIG. 33.

At 3716, a first bond structure is formed on and electrically coupled tothe backside interconnect structure. See, for example, FIG. 33.

At 3718, a second frontside interconnect structure is formed on a secondsubstrate, where the second frontside interconnect structure comprises asecond electronic component with a same layout as the first electroniccomponent. See, for example, FIG. 34.

At 3720, a second bond structure is formed on and electrically coupledto the second frontside interconnect structure. See, for example, FIG.34.

At 3722, the first and second bond structures are bonded together, suchthat the shield wire and the doped shield are directly between the firstand second electronic components and substantially (or completely) coverthe second electronic component. See, for example, FIG. 35.

At 3724, the carrier substrate is removed. See, for example, FIG. 36.

At 3726, a pad structure is formed over and electrically coupled to thefirst frontside interconnect structure. See, for example, FIG. 36.

While the block diagram 3700 of FIG. 37 is illustrated and describedherein as a series of acts or events, it will be appreciated that theillustrated ordering of such acts or events is not to be interpreted ina limiting sense. For example, some acts may occur in different ordersand/or concurrently with other acts or events apart from thoseillustrated and/or described herein. Further, not all illustrated actsmay be required to implement one or more aspects or embodiments of thedescription herein, and one or more of the acts depicted herein may becarried out in one or more separate acts and/or phases.

In some embodiments, the present application provides a semiconductorpackaging device including: a first IC chip including a first substrateand a first interconnect structure overlying the first substrate; asecond IC chip underlying the first IC chip, wherein the second IC chipincludes a second substrate and a second interconnect structureoverlying the second substrate; a first electronic component and asecond electronic component respectively in the first and secondinterconnect structures; and a shield structure directly between andspaced from the first and second electronic components, wherein theshield structure substantially covers the second electronic componentand is configured to block magnetic and/or electric fields. In someembodiments, the first and second electronic components are inductors.In some embodiments, the first and second electronic components have asame top layout, wherein a sidewall of the first electronic componentoverlies and is aligned to a sidewall of the second electroniccomponent. In some embodiments, the shield structure includes aconductive wire, wherein the conductive wire has a pair of wiresidewalls on opposite sides of the conductive wire when viewed inprofile, and wherein the first and second electronic component arelaterally between and laterally spaced from the wire sidewalls. In someembodiments, the shield structure includes: a TSV extending through thefirst substrate to a wire in the first interconnect structure; a shieldwire below the first substrate and substantially covering the secondelectronic component; and a backside via extending from the shield wireto the through via. In some embodiments, the shield structure furtherincludes: a trench isolation structure extending through the firstsubstrate, wherein the first and second electronic components arelaterally between the trench isolation structure and the through via;and a doped shield in the first substrate and having an opposite dopingtype as a bulk region of the first substrate, wherein the doped shieldadjoins the trench isolation structure and substantially covers thesecond electronic component. In some embodiments, the shield structurefurther includes: a trench isolation structure extending into the firstsubstrate, wherein the trench isolation structure includes a pair ofisolation segments when viewed in cross section, and wherein the firstand second electronic components are laterally between the isolationsegments; and a doped shield in the first substrate, wherein the dopedshield has an opposite doping type as a bulk region of the secondsubstrate, and wherein the doped shield is between and adjoins theisolation segments. In some embodiments, a thickness of the doped shieldis less than a thickness of the first substrate. In some embodiments,the shield structure includes: a doped channel in the first substrateand extending through the first substrate, from a bottom surface of thefirst substrate to a top surface of the first substrate; a frontside viain the first interconnect structure and extending from the doped channelto electrically couple the first interconnect structure to the dopedchannel; a shield wire below the first substrate and substantiallycovering the second electronic component; and a backside via extendingfrom the shield wire to the doped channel.

In some embodiments, the present application provides a method forforming a semiconductor packaging device, the method including: forminga first frontside interconnect structure on a frontside surface of afirst substrate, wherein the first frontside interconnect structureincludes a first inductor; forming a backside interconnect structure ona backside surface of the first substrate, opposite the frontsidesurface, wherein the backside interconnect structure includes a shieldwire directly over and greater in width than the first inductor; forminga second frontside interconnect structure on a second substrate, whereinthe second frontside interconnect structure includes a second inductor;and bonding and electrically coupling the second frontside interconnectstructure to the backside interconnect structure, wherein the shieldwire is directly between the first and second inductors upon completionof the bonding. In some embodiments, the first and second inductors areformed using individual photolithography/etching processes, wherein thephotolithography/etching processes use a same photoreticle or photomask.In some embodiments, the method further includes: doping the firstsubstrate to form a doped shield region in the first substrate, whereinthe first inductor is formed directly over the doped shield region; andforming a trench isolation structure extending into the backside surfaceof the first substrate, wherein the trench isolation structure has apair of segments, and wherein the segments adjoin and are onrespectively on opposite sides of the doped shield region. In someembodiments, the method further includes: bonding the first frontsideinterconnect structure to a carrier substrate, so the first frontsideinterconnect structure is between the carrier substrate and the firstsubstrate; and planarizing the backside surface of the first substrateto thin the first substrate before the forming of the backsideinterconnect structure. In some embodiments, the method further includesdoping the first substrate to form a doped channel region extendingthrough the first substrate, wherein the first frontside interconnectstructure is formed with a frontside via extending to the doped channelregion, and wherein the backside interconnect structure is formed with abackside via extending from the shield wire to the doped channel region.In some embodiments, the method further includes forming a TSV extendingthrough the first substrate to an interconnect wire in the firstfrontside interconnect structure, wherein the backside interconnectstructure is formed with a backside via extending from the shield wireto the TSV.

In some embodiments, the present application provides another method forforming a semiconductor packaging device, the method including: doping afirst substrate from a frontside of the first substrate to form a dopedshield region in the first substrate; forming a first frontsideinterconnect structure on the frontside of the first substrate, whereinthe first frontside interconnect structure includes a first electroniccomponent directly over the doped shield region; forming an isolationstructure extending into a backside of the first substrate, opposite thefrontside of the first substrate, and having a pair of isolationsegments, wherein the isolation segments adjoin and are respectively onopposite sides of the doped shield region; forming a second frontsideinterconnect structure on a second substrate, wherein the secondfrontside interconnect structure includes a second electronic component;and bonding the second frontside interconnect structure to the backsideof the first substrate so the doped shield region is vertically betweenthe first and second electronic components and the first and secondelectronic components are laterally between the isolation segments. Insome embodiments, the method further includes: bonding a carriersubstrate to the first frontside interconnect structure so the firstfrontside interconnect structure is between the carrier substrate andthe first substrate; and thinning the first substrate from the backsideof the first substrate. In some embodiments, the method furtherincludes: forming a backside interconnect structure on the backside ofthe first substrate, wherein the backside interconnect structureincludes a shield wire completely covering the doped shield region andthe first electronic component. In some embodiments, the method furtherincludes: forming TSVs extending into the backside of the firstsubstrate to an interconnect wire of the first frontside interconnectstructure, wherein the forming of the backside interconnect structureincludes forming a backside via extending directly from the shield wiredirectly to the TSV. In some embodiments, the method further includes:forming a first hybrid bond structure on the backside of the firstsubstrate, wherein the first hybrid bond structure is electricallycoupled to the first frontside interconnect structure; and forming asecond hybrid bond structure on the second frontside interconnectstructure, wherein the second hybrid bond structure is electricallycoupled to the second frontside interconnect structure, and wherein thebonding is performed by hybrid bonding and includes bringing the firstand second hybrid bond structures into direct contact with each other.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method for forming a semiconductor packagingdevice, the method comprising: forming a first frontside interconnectstructure on a frontside surface of a first substrate, wherein the firstfrontside interconnect structure comprises a first inductor; forming abackside interconnect structure on a backside surface of the firstsubstrate, opposite the frontside surface, wherein the backsideinterconnect structure comprises a shield wire directly over and greaterin width than the first inductor; forming a second frontsideinterconnect structure on a second substrate, wherein the secondfrontside interconnect structure comprises a second inductor; andbonding and electrically coupling the second frontside interconnectstructure to the backside interconnect structure, wherein the shieldwire is directly between the first and second inductors upon completionof the bonding.
 2. The method according to claim 1, wherein the firstand second inductors are formed using individualphotolithography/etching processes, and wherein thephotolithography/etching processes use a same photoreticle or photomask.3. The method according to claim 1, further comprising: doping the firstsubstrate to form a doped shield region in the first substrate, whereinthe first inductor is formed directly over the doped shield region; andforming a trench isolation structure extending into the backside surfaceof the first substrate, wherein the trench isolation structure has apair of segments, and wherein the segments adjoin and are onrespectively on opposite sides of the doped shield region.
 4. The methodaccording to claim 1, further comprising: bonding the first frontsideinterconnect structure to a carrier substrate, so the first frontsideinterconnect structure is between the carrier substrate and the firstsubstrate; and planarizing the backside surface of the first substrateto thin the first substrate before the forming of the backsideinterconnect structure.
 5. The method according to claim 4, furthercomprising: doping the first substrate to form a doped channel regionextending through the first substrate, wherein the first frontsideinterconnect structure is formed with a frontside via extending to thedoped channel region, and wherein the backside interconnect structure isformed with a backside via extending from the shield wire to the dopedchannel region.
 6. The method according to claim 1, further comprising:forming a through substrate via (TSV) extending through the firstsubstrate to an interconnect wire in the first frontside interconnectstructure, wherein the backside interconnect structure is formed with abackside via extending from the shield wire to the TSV.
 7. A method forforming a semiconductor packaging device, the method comprising: dopinga first substrate from a frontside of the first substrate to form adoped shield region in the first substrate; forming a first frontsideinterconnect structure on the frontside of the first substrate, whereinthe first frontside interconnect structure comprises a first electroniccomponent directly over the doped shield region; forming an isolationstructure extending into a backside of the first substrate, opposite thefrontside of the first substrate, and having a pair of isolationsegments, wherein the isolation segments adjoin and are respectively onopposite sides of the doped shield region; forming a second frontsideinterconnect structure on a second substrate, wherein the secondfrontside interconnect structure comprises a second electroniccomponent; and bonding the second frontside interconnect structure tothe backside of the first substrate so the doped shield region isvertically between the first and second electronic components and thefirst and second electronic components are laterally between theisolation segments.
 8. The method according to claim 7, furthercomprising: bonding a carrier substrate to the first frontsideinterconnect structure so the first frontside interconnect structure isbetween the carrier substrate and the first substrate; and thinning thefirst substrate from the backside of the first substrate.
 9. The methodaccording to claim 7, further comprising: forming a backsideinterconnect structure on the backside of the first substrate, whereinthe backside interconnect structure comprises a shield wire completelycovering the doped shield region and the first electronic component. 10.The method according to claim 9, further comprising: forming a throughsubstrate via (TSV) extending into the backside of the first substrateto an interconnect wire of the first frontside interconnect structure,wherein the forming of the backside interconnect structure comprisesforming a backside via extending directly from the shield wire directlyto the TSV.
 11. The method according to claim 7, further comprising:forming a first hybrid bond structure on the backside of the firstsubstrate, wherein the first hybrid bond structure is electricallycoupled to the first frontside interconnect structure; and forming asecond hybrid bond structure on the second frontside interconnectstructure, wherein the second hybrid bond structure is electricallycoupled to the second frontside interconnect structure, and wherein thebonding is performed by hybrid bonding and comprises bringing the firstand second hybrid bond structures into direct contact with each other.12. The method according to claim 1, wherein the first and secondinductors are formed with the same top layout, wherein the shield wirehas a pair of sidewall segments respectively on opposite sides of theshield wire, and wherein the first and second inductors are laterallybetween the sidewall segments after the bonding.
 13. The methodaccording to claim 7, wherein the isolation segments are formedextending completely through the first substrate.
 14. A method forforming a semiconductor packaging device, the method comprising: dopinga portion of a first substrate to form a doped shield region; forming afirst frontside interconnect structure and a second frontsideinterconnect structure respectively on the first substrate and a secondsubstrate, wherein each of the first and second frontside interconnectstructures comprises a stack of wires and vias and an inductor in thestack, and wherein the inductor of the first frontside interconnectstructure is formed overlying the doped shield region; forming abackside interconnect structure on an opposite side of the firstsubstrate as the first frontside interconnect structure and comprising ashield wire overlying the inductor of the first frontside interconnectstructure; and bonding the backside interconnect structure to the secondfrontside interconnect structure, such that the inductor of the secondfrontside interconnect structure is separated from the inductor of thefirst frontside interconnect structure by the doped shield region andthe shield wire.
 15. The method according to claim 14, furthercomprising: forming a trench isolation structure extending completelythrough the first substrate, and extending laterally in a closed pathalong a boundary of the doped shield region, after the forming of thefirst frontside interconnect structure.
 16. The method according toclaim 15, further comprising: forming a first via extending through thefirst substrate to the first frontside interconnect structure; andforming a second via on the first via, wherein the shield wire is formedelectrically coupled to the first via by the second via.
 17. The methodaccording to claim 14, wherein the inductor of the first frontsideinterconnect structure and the inductor of the second frontsideinterconnect structure have the same top layout and are verticallyaligned after the bonding.
 18. The method according to claim 14, whereinthe shield wire has a first sidewall and a second sidewall respectivelyon opposite sides of the shield wire, and wherein the inductor of thesecond frontside interconnect structure is laterally between the firstand second sidewalls.
 19. The method according to claim 14, furthercomprising: forming a conductive structure comprising the shield wireand having a U-shaped profile, wherein the U-shaped profile extendsthrough the first substrate and further wraps around the doped shieldregion from a first side of the doped shield region to a second side ofthe doped shield region opposite the first side.
 20. The methodaccording to claim 14, wherein the bonding is performed by hybridbonding.